Desynchronization mode of 2D-island creation on the vicinal surface during MBE growth
- 1 January 1998
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 123-124, 729-733
- https://doi.org/10.1016/s0169-4332(97)00558-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Influence of surfactants on the growth-kinetics of Si on Si(111)Surface Science, 1993
- Molecular beam epitaxial growth of Si on Ga-activated Si(111) surfaceApplied Physics Letters, 1992
- Surface diffusion and atom incorporation kinetics in MBE of InGaAs and AlGaAsJournal of Crystal Growth, 1991
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983