Droplet evaporation-induced ferritin self-assembled monolayer as a template for nanocrystal flash memory
- 7 May 2007
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (19), 193512
- https://doi.org/10.1063/1.2737362
Abstract
A nonvolatile nanocrystal (NC) memory containing a ferritin core was fabricated. A ferritin monolayer was formed through a droplet evaporation technique. High-pressure hydrogen ( HP - H 2 ) annealing effectively reduced iron oxide ( Fe 2 O 3 ) to form conductive iron NC. In addition, HP - H 2 annealing also improved memory characteristics by passivation of the interface states at Si ∕ Hf O 2 . The authors observed good memory characteristics, including fast program/erase (P/E) operation, a memory window of 1.75 V under ± 6 V , and a stable memory window up to 10 4 s at 85 ° C .This publication has 10 references indexed in Scilit:
- Magnetic properties of self-assembled ferritin-core arraysJournal of Applied Physics, 2006
- Electron confinement in a metal nanodot monolayer embedded in silicon dioxide produced using ferritin proteinApplied Physics Letters, 2006
- The Effect of Fixed Oxide Charge in Al[sub 2]O[sub 3] Blocking Dielectric on Memory Properties of Charge Trap Flash Memory DevicesElectrochemical and Solid-State Letters, 2006
- Metal Nanocrystal Memory With High-$kappa$Tunneling Barrier for Improved Data RetentionIEEE Transactions on Electron Devices, 2005
- Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applicationsJournal of Electronic Materials, 2005
- Self-assembly of Ni nanocrystals on HfO2 and N-assisted Ni confinement for nonvolatile memory applicationApplied Physics Letters, 2004
- Metal nanocrystal memories. I. Device design and fabricationIEEE Transactions on Electron Devices, 2002
- Fabrication of a two-dimensional array of nano-particles using ferritin moleculeThin Solid Films, 2001
- Self-Organization of Large Gold Nanoparticle ArraysJournal of the American Chemical Society, 2001
- Charge retention of scaled SONOS nonvolatile memory devices at elevated temperaturesSolid-State Electronics, 2000