Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resolved electroluminescence and photoluminescence microscopy
- 29 November 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (22), 3440-3442
- https://doi.org/10.1063/1.125289
Abstract
No abstract availableKeywords
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