25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning
- 3 October 2011
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 19 (21), 20435-20443
- https://doi.org/10.1364/oe.19.020435
Abstract
We report a high-speed ring modulator that fits many of the ideal qualities for optical interconnect in future exascale supercomputers. The device was fabricated in a 130nm SOI CMOS process, with 7.5μm ring radius. Its high-speed section, employing PN junction that works at carrier-depletion mode, enables 25Gb/s modulation and an extinction ratio >5dB with only 1V peak-to-peak driving. Its thermal tuning section allows the device to work in broad wavelength range, with a tuning efficiency of 0.19nm/mW. Based on microwave characterization and circuit modeling, the modulation energy is estimated ~7fJ/bit. The whole device fits in a compact 400μm2 footprint.This publication has 14 references indexed in Scilit:
- 30GHz Ge electro-absorption modulator integrated with 3μm silicon-on-insulator waveguideOptics Express, 2011
- Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector.Optics Express, 2011
- High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltageOptics Letters, 2010
- Ultra-low voltage, ultra-small mode volume silicon microring modulatorOptics Express, 2010
- Wavelength-tunable silicon microring modulatorOptics Express, 2010
- Optical I/O Technology for Tera-Scale ComputingIEEE Journal of Solid-State Circuits, 2009
- Device Requirements for Optical Interconnects to Silicon ChipsProceedings of the IEEE, 2009
- Computer Systems Based on Silicon Photonic InterconnectsProceedings of the IEEE, 2009
- Waveguide-integrated, ultralow-energy GeSi electro-absorption modulatorsNature Photonics, 2008
- Optical modulator on silicon employing germanium quantum wellsOptics Express, 2007