Carrier surface recombination in HgI2 photon detectors
- 1 May 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5), 2472-2476
- https://doi.org/10.1063/1.332363
Abstract
Carrier collection efficiency versus voltage characteristics were studied in detail in HgI2 photon detectors of various thicknesses for the 5.9‐keV x‐ray emission of 55Fe. The results prove the important role of carrier surface recombination in limiting the carrier collection, and its consequences on the detector performances. Electron and hole surface recombination velocities in our samples were about 104 cm/sec. Hole trapping times were about 10−6 sec, while electron trapping times were much longer than ∼10−5 sec.Keywords
This publication has 22 references indexed in Scilit:
- Photoelectronic properties of HgI2Nuclear Instruments and Methods, 1978
- TSC in HgI2 crystals grown by solution and vapor phase techniquesNuclear Instruments and Methods, 1978
- State-of-the-art of crystal growth and nuclear spectroscopic evaluation of mercuric iodide radiation detectorsNuclear Instruments and Methods, 1978
- The characterization of CdTe and HgI2 crystals and detectors by light spot scanning (LSS)Nuclear Instruments and Methods, 1978
- Fabrication of HgI2 nuclear detectorsNuclear Instruments and Methods, 1977
- The phase diagram, LiOH-Ta2 O5-H2O and the hydrothermal synthesis of LiTaO3 and LiNbO3Journal of Crystal Growth, 1976
- Vapor growth of HgI2 by periodic source or crystal temperature oscillationJournal of Crystal Growth, 1976
- On the Feasibility of Observing Photoemission from Metal Contacts into AnthraceneMolecular Crystals and Liquid Crystals, 1974
- High-field effects in photoconducting cadmium sulphideJournal of Physics and Chemistry of Solids, 1965
- Zum Mechanismus des lichtelektrischen Primärstromes in isolierenden KristallenThe European Physical Journal A, 1932