Depth profile investigation of β-FeSi2 formed in Si(100) by high fluence implantation of 50keV Fe ion and post-thermal vacuum annealing
- 1 August 2014
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 332, 33-36
- https://doi.org/10.1016/j.nimb.2014.02.024
Abstract
No abstract availableKeywords
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