Nonvolatile resistive memory of ferrocene covalently bonded to reduced graphene oxide
- 7 March 2012
- journal article
- Published by Royal Society of Chemistry (RSC) in Chemical Communications
- Vol. 48 (35), 4235-4237
- https://doi.org/10.1039/c2cc30973d
Abstract
Recently, the number of studies concerning organic memory devices has grown rapidly due to increase in the demand for electronic devices. Among the organic memory devices, the development of organic nonvolatile memory materials and devices is becoming an important research topic due to their low power consumption.Keywords
This publication has 31 references indexed in Scilit:
- Ferrocene-Terminated Monolayers Covalently Bound to Hydrogen-Terminated Silicon Surfaces. Toward the Development of Charge Storage and Communication DevicesAccounts of Chemical Research, 2010
- Organo- and Water-Dispersible Graphene Oxide−Polymer Nanosheets for Organic Electronic Memory and Gold NanocompositesThe Journal of Physical Chemistry C, 2010
- Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complexApplied Physics Letters, 2009
- Volatile Electrical Switching and Static Random Access Memory Effect in a Functional Polyimide Containing Oxadiazole MoietiesChemistry of Materials, 2009
- Graphene-Based MaterialsScience, 2008
- Electrical Bistability and Memory Phenomenon in Carbon Nanotube-Conjugated Polymer MatrixesThe Journal of Physical Chemistry B, 2006
- Single-Component and Mixed Ferrocene-Terminated Alkyl Monolayers Covalently Bound to Si(111) SurfacesThe Journal of Physical Chemistry B, 2006
- Two-dimensional gas of massless Dirac fermions in grapheneNature, 2005
- Fabrication of a Molecular Self-Assembled Monolayer Diode Using Nanoimprint LithographyNano Letters, 2003
- Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic DeviceScience, 1999