High-breakdown AlGaAs/InGaAs/GaAs PHEMT with tellurium doping
- 30 March 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (7), 586-588
- https://doi.org/10.1049/el:19950385
Abstract
The authors report the fabrication and characterisation of an Al0.43Ga0.57As/In0.2Ga0.8As/GaAs pseudomorphic HEMT (PHEMT) with high channel conductivity grown by solid source MBE. The high conductivity of the channel is a direct consequence of the high sheet charge and high mobility that has recently been obtained by using tellurium as the n-type dopant in 43% AlGaAs. The device characteristics reflect the resulting reduction in the parasitic resistances of the high channel conductivity. Microwave measurements yield a short-circuit current gain cutoff frequency fT of 11 GHz and maximum oscillation frequency fmax of 25 GHz. A high gate-drain breakdown voltage of 26 V along with a maximum drain current density of 400 mA/mm obtained in the device illustrate the applicability of this technology in microwave power field effect transistors.Keywords
This publication has 9 references indexed in Scilit:
- High-power V-band pseudomorphic InGaAs HEMTIEEE Electron Device Letters, 1991
- Modelling and performance comparison of optimal AIGaAs/GaAs DMTs and multichannel HEMTs for power amplificationAnnals of Telecommunications, 1990
- Deep donor levels (D X centers) in III-V semiconductorsJournal of Applied Physics, 1990
- Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTsIEEE Electron Device Letters, 1989
- AlGaAs/InGaAs heterostructures with doped channels for discrete devices and monolithic amplifiersIEEE Transactions on Electron Devices, 1989
- Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETsIEEE Transactions on Electron Devices, 1988
- A 30-GHz 1-W power HEMTIEEE Electron Device Letters, 1987
- Microwave power double-heterojunction HEMT'sIEEE Transactions on Electron Devices, 1986
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985