Electrical resistivities have been measured at room temperature and at liquid heliumtemperature for evaporated aluminumfilms of variable thickness (t), and resistivity ratios (RR) computed. If a fixed value is assumed for the Fuchs surface scattering parameter p, then the results can only be interpreted in terms of changes in the intrinsic resistivity at 4.2 K, ρi, (and electron mean free path, li) with thickness. If totally diffuse scattering is assumed, then the values ρi ≳ 0.164 μΩ ⋅ cm, li ≲ 5000 Å for the thinnest films (≈1000 Å thick) and ρi ≈ 0.0155 μΩ ⋅ cm, li ≈ 53 000 Å for the thickest (≈10 000 Å thick) are obtained. X-ray-diffraction and electron-microscopy evidence suggests that the variation of ρi with thickness is caused by increasing grain size. Moreover, films thinner than ≈4000 Å have randomly oriented grains while those thicker than ≈6000 Å have a strong [111] fiber axis; the transition from random to preferred orientation appears to be associated with secondary features in the RR-vs-t curve.