Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates
- 6 February 2017
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 64 (3), 1197-1202
- https://doi.org/10.1109/ted.2017.2654800
Abstract
Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry. Dependence of current collapse is seen, however, this also leads to enhanced FP pinchoff voltages and higher leakage. Electric field concentration at the gate edge is indicated by measuring OFF-state Two dimensional electron gas position with a sense contact technique. A model explaining the FP threshold variation due to barrier leakage is proposed.Keywords
Funding Information
- Engineering and Physical Sciences Research Council
- NXP Semiconductors
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