Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage
- 13 March 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 34 (5), 605-607
- https://doi.org/10.1109/led.2013.2249038
Abstract
A pathway to increase the threshold voltage $(V_{\rm TH})$ of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the p-GaN layer at the gate interface is one of the key controlling factors of $V_{\rm TH}$ in p-GaN gate HEMTs. In order to increase the depletion width, we devise a new device structure of p-GaN gate HEMT having a source-connected p-GaN bridge. We demonstrate that a bridged p-GaN gate HEMT structure increases the $V_{\rm TH}$ from 0.93 to 2.44 V.
Keywords
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