Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots
- 24 January 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (4), 041907
- https://doi.org/10.1063/1.1855409
Abstract
The influence of an in-plane electric field on the optical properties of single quantum dots is investigated. On a sample containing a plane of In As ∕ Ga As dots, micrometer-size electro-optical structures were produced in order to apply an external electric field in the dot plane. A large decrease of the anisotropic exchange splitting, correlated with the in-plane Stark shift, is observed.Keywords
This publication has 9 references indexed in Scilit:
- Voltage-Controlled Optics of a Quantum DotPhysical Review Letters, 2004
- Pseudopotential calculation of the excitonic fine structure of million-atom self-assembled quantum dotsPhysical Review B, 2003
- Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dotsPhysical Review B, 2002
- Exchange coupling and polarization relaxation in self-assembled quantum dotsPhysica E: Low-dimensional Systems and Nanostructures, 2002
- Exciton and Biexciton Fine Structure in Single Elongated Islands Grown on a Vicinal SurfacePhysical Review Letters, 2000
- Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum DotsPhysical Review Letters, 2000
- Electron and HoleFactors and Exchange Interaction from Studies of the Exciton Fine Structure inQuantum DotsPhysical Review Letters, 1999
- Fine structure of localized exciton levels in quantum wellsJournal of Experimental and Theoretical Physics, 1998
- Superlattices and Other HeterostructuresPublished by Springer Science and Business Media LLC ,1997