Pressure-Induced Orientation Control of the Growth of Epitaxial Silicon Nanowires

Abstract

Single crystal silicon nanowires (SiNWs) were synthesized with silane reactant using Au nanocluster-catalyzed one-dimensional growth. We have shown that under our experimental conditions, SiNWs grown epitaxially on Si(111) via the vapor−liquid−solid growth mechanism change their growth direction as a function of the total pressure. Structural characterization of a large number of samples shows that SiNWs synthesized at a total pressure of 3 mbar grow preferentially in the ⟨111⟩ direction, while the one at 15 mbar favors the ⟨112⟩ direction. Specifically by dynamically changing the system pressure during the growth process morphological changes of the NW growth directions along their length have been demonstrated.