Optical Emission Spectroscopy of the SiH4-NH3-H2 Plasma during the Growth of Silicon Nitride

Abstract

Optical emission spectroscopy of the SiH₄-NH₃-H₂ glow discharge revealed the presence of the reactive species, Si, SiH, NH, H, and H₂ in the plasma. The silane flow rate dependence of the emission intensities from these species has been well correlated with the growth rate of the resulting Si:N:H films and their compositional ratio of silicon to nitrogen. Furthermore, the numbers of SiH and NH bonds incorporated in the film are found to be proportional to the emission intensities of the SiH band and NH line, respectively. The growth mechanism of Si:N:H from the reactive SiH and NH molecules is discussed from these results.