Ion beam assisted coating and surface modification with plasma source ion implantation

Abstract

Plasma source ion implantation (PSII) is a non-line-of-sight technique which is being developed as an alternative to beamline accelerator technology for ion implantation. The initial development phase of PSII concentrated on implantation of ion species which are gaseous at room temperature (primarily nitrogen ions) and employed a cylindrical vacuum chamber 16 in. high and 14 in. in diameter. A second generation PSII system is being constructed to extend the PSII process to ion beam mixing and ion beam assisted coating modes of operation. The new, larger system (with dimensions 36×36×36 in.) will feature multiple-array sources for sputter deposition concurrent with ion bombardment.