Photochemical Construction of Photovoltaic Device Composed of p-Copper(I) Oxide and n-Zinc Oxide
- 1 January 2006
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 153 (9), C668-C672
- https://doi.org/10.1149/1.2218791
Abstract
The photochemical deposition of a p-type semiconducting copper(I) oxide (Cu2O)(Cu2O) layer by irradiating visible light in an aqueous solution containing a lactic acid and copper sulfate hydrate is presented. The p-Cu2Op-Cu2O layer was photochemically stacked on a chemically deposited n-type semiconducting ZnOZnO layer/quartz glass substrate, and the photovoltaic device was constructed by forming a Au top electrode using a sputtering technique. The Au∕p-Cu2O∕n-ZnOAu∕p-Cu2O∕n-ZnO photovoltaic device showed an electrical rectification and the performance of 46mV46mV in open-circuit voltage (Voc)(Voc) and 75μAcm−275μAcm−2 in short-circuit current density (Jsc)(Jsc) under an Air Mass 1.5 illumination.Keywords
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