Band to Band Tunneling Study in High Mobility Materials : III-V, Si, Ge and strained SiGe
- 1 June 2007
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Based on the complex bandstructure obtained by local empirical pseudopotential method (LEPM), we have developed a band to band tunneling model (BTBT), which captures band structure information, all possible transitions between different valleys, energy quantization and quantized density of states. Theoretical model is verified by experimental study on tunnel diodes on various semiconductors. BTBT leakage current in high mobility (mu) channel double gate FET is studied. We have shown that quantum confinement effect in DGFET can suppress BTBT leakage current.Keywords
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