Depth Profiling of Phosphorus in Photonic-Grade Silicon Using Laser-Induced Breakdown Spectrometry
- 1 March 1998
- journal article
- research article
- Published by SAGE Publications in Applied Spectroscopy
- Vol. 52 (3), 444-448
- https://doi.org/10.1366/0003702981943662
Abstract
Laser-induced breakdown spectrometry (LIBS) has been evaluated for depth profiling of phosphorus doping in silicon. Laser plasmas were formed by focusing a Nd:YAG laser (operating in the second harmonic, 532 nm) on the sample surface. Plasma emission was collected, dispersed, and detected with the use of a charge-coupled device (CCD). Experimental parameters, such as delay time and sample position relative to the laser focal point, were optimized to improve the signal-to-background ratio of phosphorus line emission. Diffusion profiles by LIBS of samples with different phosphorus diffusion steps are shown. Crater depth per pulse and ablated mass per pulse were measured to be 1.2 μm pulse−1 and 50 ng pulse−1, respectively. The knowledge of depth per pulse permitted the estimation of thickness of the P diffusion layer.Keywords
This publication has 26 references indexed in Scilit:
- Depth profile of thermal donor in boron-doped Czochralski-grown siliconJournal of Applied Physics, 1994
- Silicon solar cells: evolution, high-efficiency design and efficiency enhancementsSemiconductor Science and Technology, 1993
- Interaction of a Laser Beam with Metals. Part II: Space-Resolved Studies of Laser-Ablated Plasma EmissionApplied Spectroscopy, 1992
- Spectroscopic Applications of Laser-Induced PlasmasCritical Reviews in Analytical Chemistry, 1992
- Interaction of a Laser Beam with Metals. Part I: Quantitative Studies of Plasma EmissionApplied Spectroscopy, 1991
- The Analysis of Metals at a Distance Using Laser-Induced Breakdown SpectroscopyApplied Spectroscopy, 1987
- Mixing and chemical effects in SIMS depth profiling the Si/SiO2 interfaceNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Phosphorus gettering and intrinsic gettering of nickel in siliconApplied Physics Letters, 1984
- Beam-induced broadening effects in sputter depth profilingVacuum, 1984
- Secondary ion mass spectrometric image depth profile analysis of thin layersAnalytical Chemistry, 1982