Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films
- 1 December 2014
- journal article
- Published by Elsevier BV in Journal of Alloys and Compounds
- Vol. 615, 461-468
- https://doi.org/10.1016/j.jallcom.2014.06.140
Abstract
No abstract availableKeywords
Funding Information
- Republic of Turkey Ministry of Science, Industry and Technology (01072.STZ.2011-2)
This publication has 51 references indexed in Scilit:
- Effect of annealing on the properties of nanostructured CuO thin films for enhanced ethanol sensitivityCeramics International, 2013
- Annealing-induced changes in composition and optoelectronic properties of cadmium sulfide films used in copper–indium–gallium–diselenide solar cellsSolar Energy, 2012
- 12.6% efficient CdS/Cu(In,Ga)S2-based solar cell with an open circuit voltage of 879mV prepared by a rapid thermal processSolar Energy Materials and Solar Cells, 2011
- New world record efficiency for Cu(In,Ga)Se2 thin‐film solar cells beyond 20%Progress in Photovoltaics: Research and Applications, 2011
- The preparation and characterization of Ga-doped CuInS2 films with chemical bath depositionSolar Energy Materials and Solar Cells, 2010
- Direct Liquid Coating of Chalcopyrite Light‐Absorbing Layers for Photovoltaic DevicesEuropean Journal of Inorganic Chemistry, 2009
- Structural, morphological and optical properties of CuAlS2 films deposited by spray pyrolysis methodOptics Communications, 2008
- Preparation and characterization of copper oxide thin films deposited by filtered cathodic vacuum arcJournal of Physics D: Applied Physics, 2003
- Sprayed CuInS2 thin films for solar cells: The effect of solution composition and post-deposition treatmentsSolar Energy Materials and Solar Cells, 2001
- Effect of Ga incorporation in sequentially prepared CuInS2 thin film absorbersSolar Energy Materials and Solar Cells, 2001