Excitonic effects on the third-harmonic generation in parabolic quantum dots
- 16 August 2001
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 13 (35), 8197-8206
- https://doi.org/10.1088/0953-8984/13/35/324
Abstract
Excitonic effects on the third-harmonic-generation coefficient for disclike parabolic quantum dots are studied, and an analytic formula for the third-harmonic-generation coefficient is obtained by using the compact-density-matrix approach and an iterative method. Numerical results are presented for typical GaAs/AlGaAs parabolic quantum dots. The results show that the third-harmonic-generation coefficient is greatly enhanced because the excitons are localized in the quantum dots - it is over three times that obtained by just considering electron states - and that it is very sensitively dependent on the exciton confinement. In addition, the third-harmonic-generation coefficient is related to the relaxation constant.Keywords
This publication has 12 references indexed in Scilit:
- Third-harmonic generation in InAs/GaAs self-assembled quantum dotsPhysical Review B, 1999
- Enhancement of the third-order nonlinear optical susceptibility in Si quantum wiresPhysical Review B, 1993
- Excitons in quantum dots with parabolic confinementPhysical Review B, 1992
- Model system for optical nonlinearities: Asymmetric quantum wellsPhysical Review B, 1991
- Biexciton states in semiconductor quantum dots and their nonlinear optical propertiesPhysical Review B, 1989
- Observation of discrete electronic states in a zero-dimensional semiconductor nanostructurePhysical Review Letters, 1988
- Light Emission from Quantum-Box Structure by Current InjectionJapanese Journal of Applied Physics, 1987
- Optical spectroscopy of ultrasmall structures etched from quantum wellsApplied Physics Letters, 1986
- Zero-dimensional "excitons" in semiconductor clustersIEEE Journal of Quantum Electronics, 1986
- Quantum size effect in semiconductor microcrystalsSolid State Communications, 1985