Dynamic and static behavior of packaged silicon carbide MOSFETs in paralleled applications
- 1 March 2014
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1478-1483
- https://doi.org/10.1109/apec.2014.6803502
Abstract
There is little work done to study the nuances related to paralleling the higher speed SiC Mosfet devices when compared to Si devices. This paper deals with the parallel operation of packaged silicon carbide (SiC) MOSFETs. The parameters that affect the static and dynamic current sharing behavior of the devices have been studied. We also investigate the sensitivity of those parameters to the junction temperature of the devices. The case temperature difference for paralleled MOSFETs has been experimentally measured on a SEPIC converter for different gate driver resistance and different switching frequency, the results show the current and temperature can be well balanced for the latest generation of SiC MOSFETs with low gate driver resistance.Keywords
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