Analytic model of carrier mobility in doped disordered organic semiconductors
- 7 December 2005
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 72 (23), 235202
- https://doi.org/10.1103/physrevb.72.235202
Abstract
We suggest an analytic model of charge transport in weakly and heavily doped disordered organic materials. Doping of such materials increases the density of carriers but also creates deep Coulomb traps. The net effect is typically a decreasing mobility at low doping levels. At high doping levels the Coulomb traps overlap spatially, which leads to smoothening of the potential landscape and to strongly increasing mobility. The model is used to fit experimental data on the mobility in electrochemically (EC) doped polythiophenes. It also explains why increasing the carrier density by the field-effect results in a much higher mobility than an equivalent increase of the carrier density by EC doping.Keywords
This publication has 16 references indexed in Scilit:
- Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting PolymersPhysical Review Letters, 2005
- Charge injection into cathode-doped amorphous organic semiconductorsPhysical Review B, 2005
- Effect of doping on the density-of-states distribution and carrier hopping in disordered organic semiconductorsPhysical Review B, 2005
- Organic Homojunction Diodes with a High Built-in Potential: Interpretation of the Current-Voltage Characteristics by a Generalized Einstein RelationPhysical Review Letters, 2005
- Energy‐level alignment at metal–organic and organic–organic interfacesJournal of Polymer Science Part B: Polymer Physics, 2003
- Variable range hopping as possible origin of a universal relation between conductivity and mobility in disordered organic semiconductorsSynthetic Metals, 2002
- Weak-field carrier hopping in disordered organic semiconductors: the effects of deep traps and partly filled density-of-states distributionJournal of Physics: Condensed Matter, 2002
- Coulomb effect on doping in amorphous semiconductorsPhysical Review B, 2001
- A universal relation between conductivity and field-effect mobility in doped amorphous organic semiconductorsSynthetic Metals, 1994
- Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation StudyPhysica Status Solidi (b), 1993