Investigation of SnSe, SnSe2, and Sn2Se3 alloys for phase change memory applications
- 15 April 2008
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 103 (8), 083523
- https://doi.org/10.1063/1.2894903
Abstract
SnSe, , and alloys have been studied to explore their suitability as new phase change alloys for electronic memory applications. The temperature dependence of the structural and electrical properties of these alloys has been determined and compared with that of GeTe. A large electrical resistance contrast of more than five orders of magnitude is achieved for and alloys upon crystallization. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The activation energy for crystallization of SnSe, , and has been determined. The microstructure of these alloys has been investigated by atomic force microscopy measurements. X-ray reflection measurements reveal density increases of 5.0%, 17.0%, and 9.1% upon crystallization for the different alloys.
Keywords
This publication has 31 references indexed in Scilit:
- Phase-change materials for rewriteable data storageNature Materials, 2007
- The prospects of non-volatile phase-change RAMMicrosystem Technologies, 2006
- Low-cost and nanoscale non-volatile memory concept for future silicon chipsNature Materials, 2005
- Semiconducting tin selenide thin films prepared by heating Se–Sn layersSemiconductor Science and Technology, 2004
- The Dependence of Crystal Structure of Te‐Based Phase‐Change Materials on the Number of Valence ElectronsAdvanced Materials, 2004
- Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phaseThin Solid Films, 2000
- Electronic structure of tin monochalcogenides from SnO to SnTePhysical Review B, 1998
- Structural map for the crystals with an average of five valence electrons per atomPhysical Review B, 1986
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Optical and Electrical Properties and Band Structure of GeTe and SnTePhysical Review B, 1968