Semiconductor strained layers
- 31 December 1997
- journal article
- Published by Elsevier BV in Current Opinion in Solid State and Materials Science
- Vol. 2 (6), 722-727
- https://doi.org/10.1016/s1359-0286(97)80016-2
Abstract
No abstract availableKeywords
This publication has 46 references indexed in Scilit:
- Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxyApplied Physics Letters, 1997
- Schottky barrier detectors on GaN for visible–blind ultraviolet detectionApplied Physics Letters, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hoursApplied Physics Letters, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetimeApplied Physics Letters, 1997
- Blue-Green Light-Emitting Diodes and Violet Laser DiodesMRS Bulletin, 1997
- GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect TransistorsMRS Bulletin, 1997
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Band-structure engineering in strained semiconductor lasersIEEE Journal of Quantum Electronics, 1994
- Strained layer heterostructures, and their applications to MODFETs, HBTs, and lasersProceedings of the IEEE, 1993