MRAM with improved magnetic tunnel junction material

25 June 2003

conference paper
conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. BB4
https://doi.org/10.1109/intmag.2002.1000779

Abstract

Summary form only given. Increasing output and decreasing switching field distribution are very important for the development of magnetic tunnel junction (MTJ) materials, in order to achieve a high capacity MRAM. We introduce an amorphous MTJ material with excellent characteristics, which is evaluated through the MRAM/MTJ test element groups (TEG) with a MOS circuit.

Keywords

MAGNETIC TUNNELING
TUNNELING MAGNETORESISTANCE
MAGNETIC MATERIALS
AMORPHOUS MAGNETIC MATERIALS
MAGNETIC ANISOTROPY
ANNEALING
VOLTAGE
THERMAL STABILITY
PERPENDICULAR MAGNETIC ANISOTROPY
AMORPHOUS MATERIALS

This publication has 1 reference indexed in Scilit:

Micromagnetics of spin valve memory cells
IEEE Transactions on Magnetics, 1996

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