Elastic strains in CdTe-GaAs heterostructures grown by metalorganic chemical vapor deposition
- 13 July 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (2), 127-129
- https://doi.org/10.1063/1.98590
Abstract
The elastic response associated with the lattice mismatch in (100)CdTe∥(100)GaAs heterostructures was investigated by performing photoluminescence measurements as a function of CdTe layer thicknesses. The heterostructures were grown by metalorganic chemical vapor deposition. Estimates of strains, stresses, and lattice constants were obtained from shifts in near-band-edge photoluminescence features. Biaxial compressive strains are present in CdTe layers thinner than 1 μm. The magnitudes of the strains are larger than those expected from equilibrium models and from transmission electron microscopy results. With increasing CdTe layer thicknesses above 0.1 μm biaxial tensile strains affect the GaAs surfaces.Keywords
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