Energy-band discontinuities in a heterojunction of amorphous hydrogenated Si and crystalline Si measured by internal photoemission

Abstract

Energy-band discontinuities were measured for hydrogenated amorphous silicon and crystalline silicon heterojunctions by internal photoemission. The measurement was performed both for the conduction-band side and for the valence-band side, and the conduction-band discontinuity and the valence-band discontinuity were estimated to be 0.09 and 0.71 eV, respectively. This result indicates that the band discontinuity mainly exists at the valence-band side.