Properties of zinc phosphide/zinc oxide heterojunctions
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2), 1069-1075
- https://doi.org/10.1063/1.330518
Abstract
The properties of p-Zn3P2/n-ZnO heterojunctions prepared by sputter deposition of ZnO onto Zn3P2 substrate are investigated. Analysis of the experimental data indicates an interface state density greater than 1012 cm−2 and a capture cross section on the order of 10−13 cm2. Using the experimental data a band diagram for Zn3P2/ZnO heterojunction is proposed. Mechanisms responsible for the low, open-circuit voltage are discussed.Keywords
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