Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states
- 29 December 2007
- journal article
- Published by Springer Science and Business Media LLC in Journal of Materials Science: Materials in Electronics
- Vol. 19 (S1), 248-253
- https://doi.org/10.1007/s10854-007-9531-y
Abstract
No abstract availableKeywords
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