An Etch-Stop Barrier Structure for GaN High-Electron-Mobility Transistors
- 24 January 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 34 (3), 369-371
- https://doi.org/10.1109/led.2012.2237374
Abstract
We present an etch-stop barrier structure for GaN high-electron-mobility transistors. With this new etch-stop structure, gate recess can be precisely controlled while maintaining a low surface defect density. Normally off GaN metal-insulator-semiconductor FETs fabricated using the new technology demonstrated a record effective channel mobility of 1131 cm 2 ·V -1 ·s -1 with a subthreshold slope of 62 mV/decade. Due to the low interface density of states, these devices have very low hysteresis and negligible frequency dispersion in the capacitance-voltage ( C - V ) measurements.Keywords
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