Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency
- 1 January 2013
- journal article
- Published by Institute of Electronics, Information and Communications Engineers (IEICE) in IEICE Electronics Express
- Vol. 10 (2), 20120960
- https://doi.org/10.1587/elex.10.20120960
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- An 1 GHz Class E LDMOS Power AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Linearity characteristics of microwave-power GaN HEMTsIEEE Transactions on Microwave Theory and Techniques, 2003
- Class-F power amplifiers with maximally flat waveformsIEEE Transactions on Microwave Theory and Techniques, 1997
- Class E-A new class of high-efficiency tuned single-ended switching power amplifiersIEEE Journal of Solid-State Circuits, 1975