On the nature of ferromagnetism in diluted magnetic semiconductors: GaAs:Mn
- 1 January 2003
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 61 (2), 235-241
- https://doi.org/10.1209/epl/i2003-00224-x
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Room temperature ferromagnetic properties of (Ga, Mn)NApplied Physics Letters, 2001
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductorsPhysical Review B, 2001
- On the theory of carrier-induced ferromagnetism in diluted magnetic semiconductorsLow Temperature Physics, 2000
- Double Resonance Mechanism of Ferromagnetism and Magnetotransport in (Ga-Mn)AsPhysical Review Letters, 2000
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- On the theory of the deep levels of transition metal impurities in semiconductorsJournal of Physics C: Solid State Physics, 1976
- Simple model of multiple charge states of transition-metal impurities in semiconductorsPhysical Review B, 1976
- Interaction Between Localized States in MetalsPhysical Review B, 1964
- Localized Magnetic States in MetalsPhysical Review B, 1961
- Interaction between the-Shells in the Transition Metals. II. Ferromagnetic Compounds of Manganese with Perovskite StructurePhysical Review B, 1951