Photoelectrochemical Properties of InGaN for H2 Generation from Aqueous Water
- 1 October 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (10R)
- https://doi.org/10.1143/jjap.44.7433
Abstract
The photoelectrochemical properties of In x Ga1-x N (x=0.02 and 0.09) were compared with those of GaN. The band-edge potentials of In x Ga1-x N were determined by the Mott–Schottky plot for the first time. The gas generation from a counterelectrode using the In0.02Ga0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency.Keywords
This publication has 10 references indexed in Scilit:
- Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic OxidationJapanese Journal of Applied Physics, 2005
- Impurity doping effect on thermal stability of InGaN∕GaN multiple quantum-well structuresJournal of Applied Physics, 2005
- X-ray diffraction study of InGaN/GaN superlattice interfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003
- Photo-enhanced chemical wet etching of GaNMaterials Science and Engineering B, 2002
- GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysisJournal of Crystal Growth, 2002
- Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxyphysica status solidi (a), 2001
- Electrochemistry and Photoetching of n-GaNJournal of the Electrochemical Society, 2000
- Deep ultraviolet enhanced wet chemical etching of gallium nitrideApplied Physics Letters, 1998
- Excitonic emissions from hexagonal GaN epitaxial layersJournal of Applied Physics, 1996
- Physical Chemistry of Semiconductor−Liquid InterfacesThe Journal of Physical Chemistry, 1996