Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop
- 1 October 1990
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 137 (10), 3219-3223
- https://doi.org/10.1149/1.2086190