Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (6), 1432-1444
- https://doi.org/10.1109/16.81636
Abstract
No abstract availableKeywords
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