Band-Gap—Resonant Nonlinear Refraction in III-V Semiconductors
- 20 July 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 47 (3), 197-200
- https://doi.org/10.1103/physrevlett.47.197
Abstract
We present experimental measurements of the resonance of the large intensity dependence of refractive index in InSb near the band-gap energy at 77 K and derive a semiempirical theory for this effect which fits the measurements well, both in absolute magnitude and wavelength dependence, using only measurable parameters. The size of the effect in other nondegenerate direct-band-gap III-V compound semiconductors and at other temperatures is predicted.Keywords
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