Current status of ion implantation for VLSI applications
- 1 February 1989
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 37-38, 9-15
- https://doi.org/10.1016/0168-583x(89)90128-6
Abstract
The implanted dose in practical VLSI applications ranges from 10 11 to 10 16 /cm 2 with a medium energy from 30 to 150 keV, which is used for junction formation and threshold voltage control in both MOS and bipolar devices. Recently, new applications have been studied especially in the very low and very high (MeV) energy and/or the very high dose range which enables one to synthesize the materials. In this review paper, the following current topics of implantation applications for VLSI are discussed: 1) Shallow junction formation with very low energetic B + or BF + 2 implant or preamorphotization with Si + or Ge + ions; 2) MeV implant for retrograde well, buried layer, threshold voltage control in ROM, and gettering in advanced device structures; 3) High dose oxygen implant for SIMOX; and 4) Angle implant for trench structures or drain engineering of advanced transistors. The problems in ion implantation equipment as well as in the technologies are also discussed from the viewpoint of an equipment user for semiconductor manufacturing.Keywords
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