The switching mechanism in amorphous silicon junctions
- 1 December 1985
- journal article
- Published by Elsevier BV in Journal of Non-Crystalline Solids
- Vol. 77-78, 1373-1382
- https://doi.org/10.1016/0022-3093(85)90912-3
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Memory switching in amorphous silicon devicesJournal of Non-Crystalline Solids, 1983
- Switching in hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1982
- The threshold characteristics of chalcogenide-glass memory switchesJournal of Non-Crystalline Solids, 1979
- Switching phenomena in metal-insulator-n/p+ structures: theory, experiment and applicationsRadio and Electronic Engineer, 1978
- The characterisation of metal-thin insulator-n-p+ silicon switching devicesRevue de Physique Appliquée, 1978
- Structural and electrical properties of granular metal filmsAdvances in Physics, 1975
- Electronic conduction and switching in chalcogenide glassesIEEE Transactions on Electron Devices, 1973
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968