Analysis of Raman spectra of amorphous-nanocrystalline silicon films

Abstract
A new method is proposed for the treatment of Raman spectra of amorphous-nanocrystalline silicon films serving as a major component in solar cells. The method is based on the well-known theory of strong spatial localization (confinement) of phonons and offers the possibility of estimating the fractional content of the amorphous and crystalline phases in a film and the size distribution of nanocrystals.