Effects of the in-situ drain doping on hot-carrier degradation in polysilicon thin film transistors
- 31 July 1996
- journal article
- review article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 39 (7), 1065-1069
- https://doi.org/10.1016/0038-1101(95)00409-2
Abstract
No abstract availableKeywords
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