Enhanced nucleation of diamond films assisted by positive dc bias
- 1 June 2001
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 389 (1-2), 68-74
- https://doi.org/10.1016/s0040-6090(01)00884-7
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Analysis of heteroepitaxial mechanism of diamond grown by chemical vapor depositionDiamond and Related Materials, 1998
- Growth of diamond on silicon during the bias pretreatment in chemical vapor deposition of polycrystalline diamond filmsJournal of Applied Physics, 1996
- Epitaxy of diamond on siliconDiamond and Related Materials, 1995
- Structural characterization of diamond films grown epitaxially on siliconDiamond and Related Materials, 1994
- Investigations of diamond nucleation on a-C films generated by d.c. bias and microwave plasmaDiamond and Related Materials, 1994
- Heteroepitaxial diamond growth on (100) siliconDiamond and Related Materials, 1993
- Nucleation mechanisms of diamond in plasma chemical vapor depositionDiamond and Related Materials, 1993
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Generation of diamond nuclei by electric field in plasma chemical vapor depositionApplied Physics Letters, 1991
- Current Issues and Problems in the Chemical Vapor Deposition of DiamondScience, 1990