Growth of Straight, Atomically Perfect, Highly Metallic Silicon Nanowires with Chiral Asymmetry
- 20 December 2007
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 8 (1), 271-275
- https://doi.org/10.1021/nl072591y
Abstract
In the quest of nano-objects for future electronics, silicon nanowires could possibly take over carbon nanotubes. Here we show the growth by self-organization of straight, massively parallel silicon nanowires having a width of 1.6 nm, which are atomically perfect and highly metallic conductors. Surprisingly, these silicon nanowires display a strong symmetry breaking across their widths with two chiral species that self-assemble in large left-handed and right-handed magnetic-like domains.Keywords
This publication has 15 references indexed in Scilit:
- From Si Nanowires to Porous Silicon: The Role of Excitonic EffectsPhysical Review Letters, 2007
- Atomic structure of Si nanowires on Ag(110): A density-functional theory studyPhysical Review B, 2006
- Self-aligned silicon quantum wires on Ag(110)Surface Science, 2005
- "Plugging into Enzymes": Nanowiring of Redox Enzymes by a Gold NanoparticleScience, 2003
- Wired for successNature, 2002
- Gallium Nitride Nanowire NanodevicesNano Letters, 2002
- Control of Thickness and Orientation of Solution-Grown Silicon NanowiresScience, 2000
- Core-level spectroscopy of the clean Si(001) surface: Charge transfer within asymmetric dimers of the 2×1 andc(4×2) reconstructionsPhysical Review Letters, 1992
- Angle-resolved-photoemission study of the electronic structure of the Si(001)c(4×2) surfacePhysical Review Letters, 1990
- Many-electron singularity in X-ray photoemission and X-ray line spectra from metalsJournal of Physics C: Solid State Physics, 1970