Equivalence between resonant tunneling and sequential tunneling in double-barrier diodes
- 4 May 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (18), 1281-1283
- https://doi.org/10.1063/1.97884
Abstract
Resonant tunneling is known to lead to negative differential resistance in double-barrier diodes. Sequential tunneling has been proposed by S. Luryi [Appl. Phys. Lett. 47, 490 (1985)] as an alternative mechanism for the negative differential resistance observed. We show that the two interpretations lead to the same predictions for the dc current.Keywords
This publication has 10 references indexed in Scilit:
- Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applicationsIEEE Journal of Quantum Electronics, 1986
- Frequency limit of double-barrier resonant-tunneling oscillatorsApplied Physics Letters, 1985
- Effect of Inelastic Processes on Resonant Tunneling in One DimensionPhysical Review Letters, 1985
- Quantum well oscillatorsApplied Physics Letters, 1984
- Phonon-limited mobility in GaAlAs/GaAs heterostructuresApplied Physics Letters, 1984
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Tunneling from an Independent-Particle Point of ViewPhysical Review B, 1961
- Zur Quantentheorie des AtomkernesThe European Physical Journal A, 1928
- Three Notes on the Quantum Theory of Aperiodic EffectsPhysical Review B, 1928