Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V s
- 27 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (9), 840-842
- https://doi.org/10.1063/1.100862
Abstract
Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin‐layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low‐temperature (≂4 K) mobility for electrons at these interfaces is as high as 2×106 cm2/V s for an electron density of ≂5×1011 cm−2—a factor of four improvement over the highest mobility reported for inverted interfaces.Keywords
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