Dielectric and ferroelectric properties of BaTiO3 thin films grown by the sol-gel process

Abstract

Transparent smooth and crack‐free BaTiO3thin films were deposited on stainless steel, fused silica,platinum plates, and platinized silicon wafers (100) using the sol‐gel process. Barium 2‐ethyl hexanoate and titanium isopropoxide were used as precursors. Annealing of the films at 750 °C for 2 h was necessary to get polycrystalline films. The electrical properties of the films prepared on stainless‐steel substrates showed an electrode barrier effect whereas those prepared on platinum substrates were susceptible to ambient atmospheric humidity. However, filmsgrown on platinum substrates and measured under dry conditions showed very good electrical properties.Ferroelectric hysteresis and C‐V characteristics were also studied on these films.