Ion Bombardment Enhanced Etching for Bi–Ca–Sr–Cu–O High-Tc Superconducting Thin Films

Abstract
Ion bombardment enhanced etching (IBEE) has been first applied to Bi–Ca–Sr–Cu–O (BCSCO) high-T c superconducting thin films. It was found out that the damaged region formed by the ion irradiation with a 200 keV Si++ focused ion beam was selectively dissolved in 1 normal KOH solution. The IBEE process resolves 0.1 µm patterns in the BCSCO films. Other strong alkaline solutions such as NaOH solution were also effective for the selective etching of the BCSCO films, but acid solutions did not give an enhanced etch rate at the irradiated region. The KOH treatment gave no effect on T c of the BCSCO film. Bridge structures with the width of 1.5 µm were successfully fabricated with little degradation in T c.