High-frequency lamb wave device composed of MEMS structure using LiNbO3 thin film and air gap
- 28 October 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
- Vol. 57 (11), 2564-2571
- https://doi.org/10.1109/tuffc.2010.1722
Abstract
High-frequency devices operating at 3 GHz or higher are required, for instance, for future 4th generation mobile phone systems in Japan. Using a substrate with a high acoustic velocity is one method to realize a high-frequency acoustic or elastic device. A Lamb wave has a high velocity when the substrate thickness is thin. To realize a high-frequency device operating at 3 GHz or higher using a Lamb wave, a very thin (less than 0.5 μm thick) single-crystal plate must be used. It is difficult to fabricate such a very thin single crystal plate. The authors have attempted to use a c-axis orientated epitaxial LiNbO 3 thin film deposited by a chemical vapor deposition system (CVD) instead of using a thin LiNbO 3 single crystal plate. Lamb wave resonators composed of a interdigital transducer (IDT)/the LiNbO 3 film/air gap/base substrate structure like micro-electromechanical system (MEMS) transducers were fabricated. These resonators have shown a high frequency of 4.5 and 6.3 GHz, which correspond to very high acoustic velocities of 14 000 and 12 500 m/s, respectively, have excellent characteristics such as a ratio of resonant and antiresonant impedance of 52 and 38 dB and a wide band of 7.2% and 3.7%, respectively, and do not have spurious responses caused by the 0th modes of shear horizontal (SH 0 ) and symmetric (S 0 ) modes.Keywords
This publication has 9 references indexed in Scilit:
- Tunable Filters Using Ultrawide-Band Surface Acoustic Wave Resonator Composed of Grooved Cu Electrode on LiNbO3Japanese Journal of Applied Physics, 2010
- Design and fabrication of thin film lamb wave resonators utilizing longitudinal wave and interdigital transducersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Development of Substrate Structures and Processes for Practical Applications of Various Surface Acoustic Wave DevicesJapanese Journal of Applied Physics, 2005
- Resonator filters using shear horizontal-type leaky surface acoustic wave consisting of heavy-metal electrode and quartz substrateIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2004
- Lamb-Wave-Type High Frequency ResonatorJapanese Journal of Applied Physics, 2003
- Very small IF resonator filters using reflection of shear horizontal wave at free edges of substrateIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2002
- Love-type-SAW resonator of small size with very low capacitance ratio and its application to VCOPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Determination of the Polarities of ZnO Thin Films on Polar and Nonpolar Substrates Using Scanning Nonlinear Dielectric MicroscopyJapanese Journal of Applied Physics, 2000
- Piezoelectric properties of zinc oxide films on glass substrates deposited by RF-magnetron-mode electron cyclotron resonance sputtering systemIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 1995