2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (2), 257-267
- https://doi.org/10.1109/16.557713
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
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