Direct observation of the principal deep level (EL2) in undoped semi-insulating GaAs
- 1 April 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (7), 610-612
- https://doi.org/10.1063/1.94019
Abstract
A high spatial resolution, near infrared absorption method has been used to determine [EL2] concentrations in semi-insulating undoped Czochralski liquid encapsulated (LEC) GaAs. Fine structure superimposed on the well-known ‘‘W’’ distribution across 〈110〉 diameters of {001} wafers has been detected. Fine structure has also been directly observed in {110} sections of ingots grown along 〈001〉 using a CCTV vidicon system to observe transmitted infrared radiation. The structure consists of narrow bands of increased absorption which correspond with high densities of dislocations in the same specimens.Keywords
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