Growth Temperature Dependence of µc-Si:H Films Sputtered with Hydrogen Gas

Abstract

Hydrogenated microcrystalline Si films were deposited by RF sputtering with hydrogen gas in the temperature range of 100–400°C. X-ray diffraction, Raman spectroscopy, and FT/IR absorption measurements revealed that grain size and (110) orientation ratio increased, the growth rate and bonded hydrogen content decreased, and the Raman shift approached that of crystalline Si as the substrate temperature was raised. The temperature dependence of the characteristics suggested that hydrogen desorption together with Si elements from the growing surface and the growth temperature play an important role in determining the characteristics.